? 2011 ixys corporation, all rights reserved ds100264a(08/11) genx3 tm 600v igbt v ces = 600v i c25 = 400a v ce(sat) 1.50v features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 2500v~ electrical isolation z optimized for low conduction and switching losses z very high current capability z square rbsoa advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts medium-speed low-vsat pt igbt for 5-40 khz switching symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0v 600 v v ge(th) i c = 4ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 75 a t j = 125 c 2 ma i ges v ce = 0v, v ge = 20v 400 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.20 1.50 v i c = 320a 1.67 v symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 400 a i c110 t c = 110c 180 a i cm t c = 25c, 1ms 1000 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 320 a (rbsoa) clamped inductive load v ce < v ces v p c t c = 25c 1000 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c v isol 50/60hz, 1 minute 2500 v~ f c mounting force 50..200/11..45 n/lb. weight 8 g MMIX1G320N60B3 g = gate e = emitter c = collector g c e isolated tab c e g preliminary technical information (electrically isolated tab)
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1G320N60B3 note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 75 130 s c ies 18 nf c oes v ce = 25v, v ge = 0v, f = 1mhz 960 pf c res 130 pf q g 585 nc q ge i c = 320a, v ge = 15v, v ce = 0.5 ? v ces 105 nc q gc 215 nc t d(on) 44 ns t ri 66 ns e on 2.7 mj t d(off) 250 ns t fi 165 ns e off 3.5 5.0 mj t d(on) 40 ns t ri 67 ns e on 3.5 mj t d(off) 330 ns t fi 265 ns e off 5.4 mj r thjc 0.125 c/w r thcs 0.05 c/w inductive load, t j = 125c i c = 100a,v ge = 15v v ce = 0.8 ? v ces , r g = 1 inductive load, t j = 25c i c = 100a,v ge = 15v v ce = 0.8 ? v ces , r g = 1 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2011 ixys corporation, all rights reserved MMIX1G320N60B3 pin: 1 = gate 5-12 = emitter 13-24 = collector package outline
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1G320N60B3 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15v 11v 9v 6v 8v 5v 7v fig. 2. output characteristics @ t j = 125oc 0 50 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15v 11v 9v 7v 5v 6v 8v fig. 3. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 320a i c = 160a i c = 80a fig. 4. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 320 a t j = 25oc 80 a 160 a fig. 5. input admittance 0 50 100 150 200 250 300 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc fig. 6. transconductance 0 40 80 120 160 200 240 280 320 0 50 100 150 200 250 300 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc
? 2011 ixys corporation, all rights reserved MMIX1G320N60B3 fig. 9. reverse-bias safe operating area 0 50 100 150 200 250 300 350 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 7. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 q g - nanocoulombs v ge - volts v ce = 300v i c = 320a i g = 10ma fig. 8. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 10. maximum transient thermal impedance dasdasd 0.3
ixys reserves the right to change limits, test conditions, and dimensions. MMIX1G320N60B3 fig. 11. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 8 12345678910 r g - ohms e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 100a i c = 50a fig. 14. inductive turn-off switching times vs. gate resistance 210 220 230 240 250 260 270 280 290 300 12345678910 r g - ohms t f i - nanoseconds 200 300 400 500 600 700 800 900 1000 1100 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 50a i c = 100a fig. 12. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 7 8 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 0.5 1 1.5 2 2.5 3 3.5 4 4.5 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 13. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 8 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.5 1 1.5 2 2.5 3 3.5 4 4.5 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 480v i c = 100a i c = 50a fig. 15. inductive turn-off switching times vs. collector current 100 125 150 175 200 225 250 275 300 325 350 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanoseconds 220 240 260 280 300 320 340 360 380 400 420 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 16. inductive turn-off switching times vs. junction temperature 100 120 140 160 180 200 220 240 260 280 300 50 55 60 65 70 75 80 85 90 95 100 t j - degrees centigrade t f i - nanoseconds 240 250 260 270 280 290 300 310 320 330 340 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 480v i c = 100a i c = 50a
? 2011 ixys corporation, all rights reserved ixys ref: g_320n60b3(96)5-14-10 MMIX1G320N60B3 fig. 18. inductive turn-on switching times vs. collector current 20 30 40 50 60 70 80 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanoseconds 34 36 38 40 42 44 46 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 19. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 32 34 36 38 40 42 44 46 48 50 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 480v i c = 50a i c = 100a fig. 17. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 12345678910 r g - ohms t r i - nanoseconds 30 40 50 60 70 80 90 100 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 50a i c = 100a
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